PART |
Description |
Maker |
V826664K24S |
2.5 VOLT 64M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE
|
Mosel Vitelic Corp Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp]
|
V437464E24V V437464E24VXTG-10PC V437464E24VXTG-75 |
3.3 VOLT 64M x 72 HIGH PERFORMANCE REGISTERED SDRAM ECC MODULE
|
MOSEL[Mosel Vitelic, Corp]
|
AT49SN6416 |
64M bit and 32M, 1.8-Volt Burst and Page Mode Flash Memory
|
Atmel Corp
|
V54C3256164VAT V54C3256164VBT V54C3256404VB V54C32 |
256Mbit SDRAM 3.3 VOLT/ TSOP II / SOC BGA / WBGA PACKAGE 16M X 16/ 32M X 8/ 64M X 4 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
|
Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp]
|
IBM13M64734BCA |
64M x 72 1 Bank Registered/Buffered SDRAM Module(64M x 72 1组寄缓冲同步动态RAM模块)
|
IBM Microeletronics
|
V54C3256164VALT6 V54C3256804VAT V54C3256404VAT V54 |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 56Mbit SDRAM.3伏,第二的TSOP /系统芯片的BGA / WBGA包装16米x 162 × 84米4
|
Mosel Vitelic, Corp.
|
M390S6450AT1 |
64M x 72 SDRAM DIMM with PLL & Register based on 64M x 4, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
AT49LV2048B AT49LV2048B-45TI AT49BV2048B-70TI |
AT49BV/LV2048B [Updated 10/02. 13 Pages] 2M bit. 2.7-Volt (BV)/3-Volt (LV) Read and2.7-Volt (BV)/3-Volt (LV) Byte-Write Flash EEPROM EEPROM
|
TE Connectivity, Ltd.
|
ACU50752 |
The ACU50752 is a Monolithic GaAs IC designed to perform the upconverter functions in a double conversion tuner: gainblock, local ... From old datasheet system
|
Anadigics Inc
|
IDT72V2103L10PF IDT72V2113L10PFI IDT72V2113L7-5BCI |
3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 128K X 18 OTHER FIFO, 10 ns, PQFP80 3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 128K X 18 OTHER FIFO, 6.5 ns, PQFP80 3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 3.3伏高密度SUPERSYNC二窄总线先进先出 Octal bus transceiver/register (3-State) - Description: Transceiver/Register (3-State) ; Fmax: 350 MHz; Logic switching levels: TTL ; Number of pins: 24 ; Output drive capability: -32/ 64 mA ; Propagation delay: 4.4 ns; Voltage: 4.5-5.5 V
|
Integrated Device Technology, Inc.
|
KM23C64000T |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
AT45DB041B-SC-2.5 AT45DB041B-TC-2.5 AT45DB041B-TI |
MOSFET N-CH 200V 105A ISOPLUS247 4-megabit 2.5-volt Only or 2.7-volt Only DataFlash 4M X 1 FLASH 2.7V PROM, PDSO28 4-megabit 2.5-volt Only or 2.7-volt Only DataFlash 4M X 1 FLASH 2.7V PROM, PDSO8
|
Atmel Corp. ATMEL Corporation Atmel, Corp.
|